Gate voltage-dependent Aharanov–Bohm experiment in the presence of Rashba spin–orbit interaction
نویسندگان
چکیده
We measured gate voltage-dependent Aharonov–Bohm oscillations in an InGaAs-based two-dimensional electron gas ring with a gate on top of one of the branches. After ensemble averaging, the h=e oscillation spectrum showed smooth oscillatory behavior as a function of the gate voltage. This could be a manifestation of the spin–orbit interaction induced interference. ? 2000 Elsevier Science B.V. All rights reserved. PACS: 73.50.–h; 71.70.Ej; 73.20.Dx; 75.25.+z
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